60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP. Features and benefits • Very low collector-emitte

文件：368.23 Kbytes 页数：21 Pages

恩XP

丝印：2M；Package：DFN2020-6；60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP. 2. Features and benefits • Very low collect

文件：337.41 Kbytes 页数：21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS. 2.

文件：331.97 Kbytes 页数：23 Pages

恩XP

丝印：3G；Package：DFN2020D-6；60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS. Features

文件：804.95 Kbytes 页数：23 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS. 2.

文件：331.97 Kbytes 页数：23 Pages

恩XP

60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

文件：368.23 Kbytes 页数：21 Pages

PHI

飞利浦

60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

General description\nNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\nNPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP.Features and benefits\n• Very low collector-emitter sa

恩XP

恩智浦

60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• High efficiency due to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• Exposed heat sink for excellent thermal and electrical conductivity\n• High energy efficiency du;

Nexperia

安世