BAS70VY

Marking：2M；Package：TSSOP6；General-purpose triple Schottky diode

1.Generaldescription General-purpose,electricallyisolatedtripleSchottkydiode,encapsulatedinanultrasmallandflat leadSOT363Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapac

BAS70VY-Q

Marking：2M；Package：TSSOP6；General-purpose triple Schottky diode

1.Generaldescription General-purpose,electricallyisolatedtripleSchottkydiode,encapsulatedinanultrasmallandflat leadSOT363Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapac

BAT754C

Marking：2M；Package：SOT23；Schottky barrier diodes

1.1Generaldescription PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection, encapsulatedinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. 1.2Featuresandbenefits Lowforwardvoltage Lowcapacitance AEC-Q101qualified 1.3

BAT754C-Q

Marking：2M；Package：SOT23；Dual Schottky barrier diode

1.Generaldescription PlanardualSchottkybarrierdiodewithanintegratedguardringforstressprotection,encapsulated inasmallSOT23Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowforwardvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q101and

BC816-25W

Marking：2M；Package：SOT323；80 V, 500 mA NPN general-purpose transistors

Featuresandbenefits •Highcurrent •Highvoltage •Twocurrentgainselections •AEC-Q101qualified

BZX884S-B7V5

Marking：2M；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-B7V5-Q

Marking：2M；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

D8V0H1U2LP1610-7

Marking：2M；Package：U-DFN1610-2；8V VOLT UNI-DIRECTIONAL HIGH SURGE TVS DIODE

Features ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV OneChannelofESDProtection LowChannelInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Applications CellularHa

ESD5451N

Marking：2M；Package：DFN1006-2；DFN1006-2 ESD Protection Devices ROHS

Descriptions TheESD5451Nisabi-directionalTVS(Transient VoltageSuppressor).Itisspecificallydesignedtoprotect sensitive electroniccomponentswhichareconnectedtolow speeddatalinesandcontrollinesfromover-stresscaused byESD(ElectrostaticDischarge),EFT(ElectricalFas

MM3Z22

Marking：2M；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.200mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5