PBSS4160QA-Q中文资料安世数据手册PDF规格书

厂商型号	PBSS4160QA-Q
功能描述	60 V, 1 A NPN low VCEsat transistor
丝印标识	11
封装外壳	DFN1010D-3
文件大小	296.09 Kbytes
页面数量	14 页
生产厂商	NEXPERIA Nexperia B.V. All rights reserved
中文名称	安世安世半导体(中国)有限公司
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-6 17:04:00
人工找货	PBSS4160QA-Q价格和库存，欢迎联系客服免费人工找货

1. General description

NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted

Device (SMD) plastic package with visible and solderable side pads.

2. Features and benefits

• Very low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain hFE at high IC

• High energy efficiency due to less heat generation

• Reduced Printed-Circuit Board (PCB) area requirements

• Solderable side pads

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Loadswitch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)