丝印：11；Package：DFN1010D-3；60 V, 1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capabi

文件：296.09 Kbytes 页数：14 Pages

NEXPERIA

安世

60 V, 1 A NPN low VCEsat transistor

NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• High energy efficiency due to less heat generation\n• Reduced Printed-Circuit Board (PCB) area requirements\n• Solderable side pads\n• Qualified acc;

Nexperia

安世

60 V, 1 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5160T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required •

文件：111.1 Kbytes 页数：10 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

文件：466.31 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子