REPETITIVE AVALANCHE AND dv/dt RATED

400Volt, 0.22Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, Internationa

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Simple Drive Requirements

Infineon

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TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A)

RAD Hard™ HEXFET® TECHNOLOGY International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for b

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Simple Drive Requirements

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Simple Drive Requirements

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Simple Drive Requirements

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Rad hard MOSFETs

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