RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) International Rectifier’s RAD-Hard TM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been

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RADIATION HARDENED POWER MOSFET THRU-HOLE

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) International Rectifier’s RAD-Hard TM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been

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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

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TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)

200 Volt, 0.10Ω, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFET power MOSFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical pre- and post-radiation test condi

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Hardware Specifications

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freescaleFreescale Semiconductor, Inc

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