REPETITIVE AVALANCHE AND dv/dt RATED

International Rectifier’s RAD-HardTM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effe

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IRF

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

文件：303.57 Kbytes 页数：12 Pages

IRF

Simple Drive Requirements

文件：303.57 Kbytes 页数：12 Pages

IRF

抗辐射 MOSFET

N 沟道 MOSFET IRHM7450 是一款采用 IR HiRel R5 技术制造的单抗辐射器件，电压为 500V，电流为 11A。其电气性能高达 100krad(Si) TID，且符合 COTS 标准。该器件具有低 RDS(on) 和栅极电荷，可降低 DC-DC 转换器和电机控制中的功率损耗。TO-254AA 封装确保了其电压控制、快速开关和温度稳定性等公认优势。

Infineon

英飞凌

TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)

N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 500 Volt, 0.51Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE fail ure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s R

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IRF

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

文件：303.57 Kbytes 页数：12 Pages

IRF

Simple Drive Requirements

文件：303.57 Kbytes 页数：12 Pages

IRF

Simple Drive Requirements

文件：142.05 Kbytes 页数：8 Pages

IRF

Simple Drive Requirements

文件：142.05 Kbytes 页数：8 Pages

IRF

HEXFET® TRANSISTOR REPETITIVE AVALANCHE AND dv/dt RATED

N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD500 Volt, 0.51Ω, (SEE) RAD HARD HEXFETInternational Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE fail ure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFET

Infineon

英飞凌