TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)

N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 500 Volt, 0.51Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE fail ure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s R

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IRF

Simple Drive Requirements

文件：142.05 Kbytes 页数：8 Pages

IRF

Simple Drive Requirements

文件：142.05 Kbytes 页数：8 Pages

IRF

HEXFET® TRANSISTOR REPETITIVE AVALANCHE AND dv/dt RATED

N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD500 Volt, 0.51Ω, (SEE) RAD HARD HEXFETInternational Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE fail ure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFET

Infineon

英飞凌

N-channel rad hard power MOSFETs

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Infineon

英飞凌