REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

200Volt, 0.40Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, Internationa

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TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A)

Features: ■ Single Event Effect (SEE) Hardened ■ Low RDS(on) ■ Low Total Gate Charge ■ Proton Tolerant ■ Simple Drive Requirements ■ Ease of Paralleling ■ Ceramic Package ■ Light Weight ■ Surface Mount

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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

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