IRHM8230

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

200Volt,0.40Ω,MEGARADHARDHEXFET InternationalRectifier’sRADHARDtechnologyHEXFETsdemonstrateexcellentthresholdvoltagestabilityandbreakdownvoltagestabilityattotalradiaitiondosesashighas1x106Rads(Si).Underidenticalpre-andpost-irradiationtestconditions,Internationa

IRHN8230

TRANSISTORN-CHANNEL(BVdss=200V,Rds(on)=0.40ohm,Id=9.0A)

Features: ■SingleEventEffect(SEE)Hardened ■LowRDS(on) ■LowTotalGateCharge ■ProtonTolerant ■SimpleDriveRequirements ■EaseofParalleling ■CeramicPackage ■LightWeight ■SurfaceMount

IRHNJ8230

RADIATIONHARDENEDPOWERMOSFETSURFACEMOUNT(SMD-0.5)

IRHY8230CM

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-257AA)

IRHY8230CM

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-257AA)

LC8230

MPEGAudioDecoderLSI

Overview TheLC8230audiodecoderdecodescodeddatathatwascompressedinconformancewithlayers1and2oftheMPEG1audiostandard(ISO/IEC11172-3).ItoutputsaPCMsignalthatcanbedirectlytransferredtoaD/Aconverter.

LCR-8230

HighFrequencyLCRMeter

PH8230

N-channelenhancementmodefield-effecttransistor

PH-8230

N-channelenhancementmodefield-effecttransistor

PH8230E

N-channelTrenchMOSlogiclevelFET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits High