IRHM8230中文资料IRF数据手册PDF规格书
IRHM8230规格书详情
200Volt, 0.40Ω, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
Features:
■ Radiation Hardened up to 1 x 106 Rads (Si)
■ Single Event Burnout (SEB) Hardened
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ Neutron Tolerant
■ Identical Pre- and Post-Electrical Test Conditions
■ Repetitive Avalanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Electrically Isolated
■ Ceramic Eyelets
产品属性
- 型号:
IRHM8230
- 制造商:
International Rectifier
- 功能描述:
HIREL, HEXFET RHD - Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
6000 |
终端可免费供样,支持BOM配单 |
询价 | |||
IR |
23+ |
TO-254 |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
IR |
24+ |
N/A |
90000 |
原厂正规渠道现货、保证原装正品价格合理 |
询价 | ||
IR |
18+ |
原厂原装假一赔十 |
57 |
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔 |
询价 | ||
IR |
24+ |
8 |
全新原装 |
询价 | |||
INFINEON |
23+ |
M-TO254-3 |
14253 |
原包装原标现货,假一罚十, |
询价 | ||
IR |
N/A |
N/A |
100 |
军工品,原装正品 |
询价 | ||
IR |
23+ |
8000 |
专注配单,只做原装进口现货 |
询价 | |||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
23+ |
7000 |
询价 |