TRANSISTOR N-CHANNEL

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) International Rectifier’s RAD-HardTM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been c

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IRF

RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)

文件：120.35 Kbytes 页数：8 Pages

IRF

TRANSISTOR N-CHANNEL

文件：130.82 Kbytes 页数：4 Pages

IRF

SiC N-Channel MOSFET

FEATURES ·High blocking voltagewith low RDS(on) ·Easy to parallel and simple to drive ·Avalanche ruggedness APPLICATIONS ·Solar Inverters ·Industrial UPS ·Battery chargers ·Motor drives

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ISC

无锡固电