N-channel rad hard power MOSFETs

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Infineon

英飞凌

HEXFET TRANSISTOR

500Volt, 0.45Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, Internationa

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Simple Drive Requirements

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TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)

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