RADIATION HARDENED POWER MOSFET

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have

文件：140.71 Kbytes 页数：8 Pages

IRF

RADIATION HARDENED POWER MOSFET

Infineon

英飞凌

Rad hard MOSFETs

\n优势:;

Infineon

英飞凌

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

文件：330.21 Kbytes 页数：12 Pages

IRF

Simple Drive Requirements

文件：335.62 Kbytes 页数：12 Pages

IRF

TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)

200 Volt, 0.10Ω, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFET power MOSFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical pre- and post-radiation test condi

文件：587.02 Kbytes 页数：14 Pages

IRF