丝印：41；Package：SOT-666；60 V, 1 A NPN low VCEsat (BISS) transistor

General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency, reduces heat generation ■ Reduces printed-circuit board a

文件：101.42 Kbytes 页数：14 Pages

PHI

飞利浦

丝印：41；Package：SOT-666；60 V, 1 A NPN low VCEsat (BISS) transistor

General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency, reduces heat generation ■ Reduces printed-circuit board a

文件：166.98 Kbytes 页数：14 Pages

恩XP

丝印：41；Package：SOT666；60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description Low VCEsat(BISS) NPN transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5160V 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM •

文件：251.89 Kbytes 页数：12 Pages

NEXPERIA

安世

60 V, 1 A NPN low VCEsat (BISS) transistor

文件：166.98 Kbytes 页数：14 Pages

PHI

飞利浦

60 V, 1 A NPN low VCEsat (BISS) transistor

Low VCEsat(BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High efficiency, reduces heat generation\n• Reduces printed-circuit board area required\n• Cost effective replacement for medium power transistor BCP55 and BCX55\n• AEC-Q101 qualified;

Nexperia

安世

Package：SOT-563，SOT-666；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 0.9A SOT666

Nexperia USA Inc.