Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Th

文件：1.32574 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET짰 Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Th

文件：1.49328 Mbytes 页数：9 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Cr

文件：1.58797 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Advanced Power MOSFET

文件：233.1 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Power MOSFET

文件：700.5 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：700.5 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：700.5 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

文件：935.15 Kbytes 页数：8 Pages

IRF

HEXFET power MOSFET. VDSS = 400V, RDS(on) = 0.55 Ohm, ID = 5.7 A

Infineon

英飞凌

HEXFET Power MOSFET

Infineon

英飞凌