Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.4A)

Description Third Gneration HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial app

文件：169.69 Kbytes 页数：6 Pages

IRF

Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.4A)

Infineon

英飞凌

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：678.89 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Cr

文件：1.58797 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Thir

文件：890.58 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.4A)

Description Third Gneration HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial app

文件：169.69 Kbytes 页数：6 Pages

IRF

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=5.4A@ TC=25℃ · Drain Source Voltage -VDSS= 400V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：258.339 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Thir

文件：890.58 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=5.7A)

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Th

文件：221.82 Kbytes 页数：8 Pages

IRF

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology, the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. Th

文件：1.32574 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司