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IIPA60R199CP

iscN-ChannelMOSFETTransistor

•FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.199Ω •Highpeakcurrentcapability •Enhancementmode •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •HardswitchingSMPStopologies

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPP60R199CP

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.199Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPW60R199CP

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤199mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA60R199CP

iscN-ChannelMOSFETTransistor

•FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.199Ω •Highpeakcurrentcapability •Enhancementmode •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •HardswitchingSMPStopologies

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA60R199CP

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisdesignedfor: •HardswitchingSMPStopologies

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA60R199CP

CoolMosPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA60R199CP

CoolMOS짰PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB60R199CP

CoolMOS짰PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB60R199CP

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •Hardswitchingtopologies,forServe

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB60R199CP

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •Hardswitchingtopologies,forServe

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB60R199CP

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB60R199CPA

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: •DC/DCconvertersforAutomotiveApplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI60R199CP

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI60R199CP

CoolMOSPowerTransistor

Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •Hardswitchingtopologies,forServe

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI60R199CP

iscN-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.199Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPI60R199CP

CoolMOS짰PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPL60R199CP

600VCoolMOSCPPowerTransistor

Description TheCoolMOS™CPseriesoffersdeviceswhichprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompact,lighter,andcooler. Features •Reducedboar

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPL60R199CP

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP60R199CP

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.199Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPP60R199CP

CoolMOS짰PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
23+
NA/
3776
原装现货,当天可交货,原型号开票
询价
INFINEON/英飞凌
23+
QFN
90000
只做原厂渠道价格优势可提供技术支持
询价
INFINEON/英飞凌
21+
VSON-4
50000
终端可免费提供样品,欢迎咨询
询价
INFINEON/英飞凌
VSON-4
265209
假一罚十原包原标签常备现货!
询价
INFINEON/英飞凌
23+
VSON-4
50000
全新原装正品现货,支持订货
询价
INFINEON/英飞凌
2019+
5500
询价
INFINEON/英飞凌
2022+
5500
原厂原装,假一罚十
询价
INFINEON/英飞凌
2022
VSON-4
80000
原装现货,OEM渠道,欢迎咨询
询价
INFINEON/英飞凌
NA
275000
一级代理原装正品,价格优势,长期供应!
询价
INFINEON
23+
VSON
8000
专注配单,只做原装进口现货
询价
更多IPL60R199CPMOSFET或IGBT供应商 更新时间2024-6-25 23:00:00