N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤199mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.73 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies

文件：264.57 Kbytes 页数：10 Pages

Infineon

英飞凌

CoolMos Power Transistor

文件：566.78 Kbytes 页数：10 Pages

Infineon

英飞凌

CoolMOS짰 Power Transistor

文件：405.57 Kbytes 页数：10 Pages

Infineon

英飞凌