首页 >IPB60R199CP>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IPB60R199CP | CoolMOS Power Transistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •Hardswitchingtopologies,forServe | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
IPB60R199CP | CoolMOS Power Transistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •Hardswitchingtopologies,forServe | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPB60R199CP | Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPB60R199CP | CoolMOS짰 Power Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
CoolMOS Power Transistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •Hardswitchingtopologies,forServe | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOS Power Transistor Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: •DC/DCconvertersforAutomotiveApplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOS짰 Power Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
iscN-ChannelMOSFETTransistor •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.199Ω •Highpeakcurrentcapability •Enhancementmode •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •HardswitchingSMPStopologies | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.199Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤199mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
CoolMOS짰PowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
iscN-ChannelMOSFETTransistor •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.199Ω •Highpeakcurrentcapability •Enhancementmode •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •HardswitchingSMPStopologies | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisdesignedfor: •HardswitchingSMPStopologies | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMosPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: •Hardswitchingtopologies,forServe | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
iscN-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.199Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
CoolMOS짰PowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
600VCoolMOSCPPowerTransistor Description TheCoolMOS™CPseriesoffersdeviceswhichprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompact,lighter,andcooler. Features •Reducedboar | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |
详细参数
- 型号：
IPB60R199CP
- 功能描述：
MOSFET COOL MOS PWR TRANS MAX 650V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
infineon |
19+ |
SOT-263 |
15000 |
询价 | |||
INFINEON/英飞凌 |
2021+ |
SOT-263 |
17066 |
原装进口假一罚十 |
询价 | ||
INFINEON |
11MY |
D2PAK(TO-263) |
3000 |
原厂直销 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
TO-263 |
8903 |
诚信经营..品质保证..价格优势 |
询价 | ||
INFINEON |
21+ |
D2PAK(TO-263) |
5000 |
专营原装正品现货,当天发货,可开发票! |
询价 | ||
INFINEON |
23+ |
D2PAK(TO-263) |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
INENOI |
09+ |
SOT263 |
2200 |
全新原装,价格优势 |
询价 | ||
Infineon(英飞凌) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Infineon |
22+ |
TO263 |
6000 |
全新原装正品 现货 优势供应 |
询价 | ||
INFINEON/英飞凌 |
22+ |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 |
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