HALF-BRIDGE DRIVER

Description The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is com

文件：154.27 Kbytes 页数：15 Pages

IRF

HALF-BRIDGE DRIVER

文件：167.15 Kbytes 页数：15 Pages

INFINEON

英飞凌

HALF-BRIDGE DRIVER

Description The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is com

文件：154.27 Kbytes 页数：15 Pages

IRF

HALF-BRIDGE DRIVER

文件：155.7 Kbytes 页数：15 Pages

IRF

HALF-BRIDGE DRIVER

文件：155.7 Kbytes 页数：15 Pages

IRF

600 V half-bridge gate driver IC with shoot through protection

600 V Half Bridge Driver IC with typical 0.25 A source and 0.5 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. • Floating channel designed for bootstrap operation\n• Fully operational to +600 V\n• Tolerant to negative transient voltage\n• dV/dt immune\n• Gate drive supply range from 10 to 20 V\n• Undervoltage lockout for both channels\n• CMOS Schmitt-triggered inputs with pull-down\n• Matched propagation del;

Infineon

英飞凌

Package：8-SOIC（0.154"，3.90mm 宽）；包装：散装 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8SOIC

INFINEON

英飞凌

Package：8-SOIC（0.154"，3.90mm 宽）；包装：散装 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8SOIC

INFINEON

英飞凌

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8SOIC

INFINEON

英飞凌