HALF-BRIDGE DRIVER

Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

文件：321.61 Kbytes 页数：23 Pages

IRF

Gate drive supply range from 10 to 20V

Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

文件：327.69 Kbytes 页数：23 Pages

IRF

HALF-BRIDGE DRIVER

文件：327.69 Kbytes 页数：23 Pages

IRF

HALF-BRIDGE DRIVER

文件：329.62 Kbytes 页数：23 Pages

Infineon

英飞凌

600 V半桥栅极驱动器 IC, 具有击穿保护

600 V 半桥驱动器 IC,具有典型的 0.2 A 拉电流和 0.35 A 灌电流，采用 8 引脚 PDIP 封装，适用于 IGBT 和 MOSFET。也有 8 引脚 SOIC、14 引脚 SOIC 和 14 引脚 PDIP 封装可选。 • 专为自举操作设计的浮动通道\n• 完全运行时的电压高达 600V\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 栅极驱动供电电压范围：10 至 20V\n• 双通道欠压锁定\n• 3.3V、5V 和 15V 逻辑输入兼容\n• 防止交叉传导逻辑\n• 双通道的匹配传播延迟\n• 高边输出与 HIN 输入同相\n• 低边输出与 LIN 输入不同相\n• 逻辑和电源接地 + /- 5 V 偏移\n• 内部死区时间为 540ns\n• 较低的 di/dt 栅极驱动器可获得更好的抗噪声性\n\n优势:;

Infineon

英飞凌

Package：8-DIP（0.300"，7.62mm）；包装：散装 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8DIP

Infineon

英飞凌

HALF-BRIDGE DRIVER

Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

文件：321.61 Kbytes 页数：23 Pages

IRF

HALF-BRIDGE DRIVER

Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

文件：321.61 Kbytes 页数：23 Pages

IRF

Gate drive supply range from 10 to 20V

Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

文件：327.69 Kbytes 页数：23 Pages

IRF

HALF-BRIDGE DRIVER

Description The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or

文件：321.61 Kbytes 页数：23 Pages

IRF