IPD65R600C6MOSFET规格书库存现货英飞凌-114ic电子网

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IIPD65R600C6	文件：335.25 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IIPP65R600C6	文件：338.06 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice p	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPA65R600C6	文件：2.09837 Mbytes Page：19 Pages	650VCoolMOSC6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPA65R600C6	文件：260.709 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPB65R600C6	文件：189.21 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPB65R600C6	文件：2.09837 Mbytes Page：19 Pages	650VCoolMOSC6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPD65R600C6	文件：33.26 Kbytes Page：1 Pages	MaterialContentDataSheet	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPD65R600C6	文件：335.25 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPD65R600C6	文件：2.09837 Mbytes Page：19 Pages	650VCoolMOSC6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI65R600C6	文件：330.49 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice p	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPI65R600C6	文件：2.09837 Mbytes Page：19 Pages	650VCoolMOSC6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPP65R600C6	文件：2.09837 Mbytes Page：19 Pages	650VCoolMOSC6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPP65R600C6	文件：338.06 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice p	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPX65R600C6	文件：2.09837 Mbytes Page：19 Pages	650VCoolMOSC6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市吉利鑫科技发展有限公司	IPD65R600C6MOSFET或IGBT开关IC	INFINEON/英飞凌	22+		2500		询价
深圳市诺美思科技有限公司	IPD65R600C6MOSFET或IGBT开关IC	INFINEON/英飞凌	22+/23+	TO252	9800	原装进口公司现货假一赔百	询价
深圳市创新迹电子有限公司	IPD65R600C6XT	INFINEON	23+		8000	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	IPD65R600C6XT	INFINEON	23+		8000	只做原装现货	询价
深圳中芯器材有限公司	IPD65R600E	inf	dc11	原厂封装	118	INSTOCK:118/tape/dpak	询价
深圳美顺电子科技有限公司	IPD65R600E6	INFINEON	1524CN	TO-252	2215	原厂直销	询价
深圳市恒创达实业有限公司	IPD65R600E6	INFINEON	17+	TO-252	6200	100%原装正品现货	询价
深圳市海天鸿电子科技有限公司	IPD65R600E6	INFINEON	1708+	TO-252	8500	只做原装进口,假一罚十	询价
深圳市达恩科技有限公司	IPD65R600E6	Infineon	18+	NA	3000	进口原装正品优势供应QQ3171516190	询价
深圳市华来深电子有限公司	IPD65R600E6	INFINE0N	23+	TO-252	11846	一级代理商现货批发,原装正品,假一罚十	询价

更多IPD65R600C6MOSFET供应商更新时间2024-6-13 11:00:00

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