丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device p

文件：338.06 Kbytes 页数：2 Pages

ISC

无锡固电

650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

文件：2.09837 Mbytes 页数：19 Pages

Infineon

英飞凌

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：260.709 Kbytes 页数：2 Pages

ISC

无锡固电