650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

文件：2.09837 Mbytes 页数：19 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device p

文件：330.49 Kbytes 页数：2 Pages

ISC

无锡固电

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

CoolMOS™ C6 结合了英飞凌作为业内先进的超结MOSFET供应商的相关经验与其先进的创新技术C6 器件具备了快速开关超结 MOSFET 的所有优点，同时又不牺牲易用性。很低的开关和通态损耗使开关应用更高效，结构紧凑、重量更轻、温度更低。\n • 600V CoolMOS™ C6 可替代 600V CoolMOS™ C3\n• 650V CoolMOS™ C6 可替代 650V CoolMOS™ C3 • 易于控制开关行为\n• 由于非常低的品质因数（R DS(ON)*Q g）和E oss），因此损耗极低\n• 非常高的换流坚固性\n• 使用简便\n• 与 C3 相比，具有更高的轻载效率\n• 出色的可靠性和经过实践验证的 CoolMOS™ 质量以及高密度二极管耐用性\n• 与以前的 CoolMOS™ 几代产品相比，性价比更高\n• 更高效、更紧凑、重量更轻、温度更低\n\n\n优势:\n \n • 提升功率密度\n• 提升可靠性\n• 通用部件可在软、硬开关拓扑中使用\n• 提高轻载效率\n• 提高在硬开关应用中的效率\n• 改进了易用性\n• 减轻可能因为 PCB 布局和封装寄生效应而引;

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device p

文件：338.06 Kbytes 页数：2 Pages

ISC

无锡固电

650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

文件：2.09837 Mbytes 页数：19 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7.3A@ TC=25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.88 Kbytes 页数：2 Pages

ISC

无锡固电