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MLD2N06CL

VOLTAGECLAMPEDCURRENTLIMITINGMOSFET

VOLTAGECLAMPEDCURRENTLIMITINGMOSFET62VOLTS(CLAMPED)RDS(on)=0.4OHMS TheMLD2N06CLisdesignedforapplicationsthatrequirearuggedpowerswitchingdevicewithshortcircuitprotectionthatcanbedirectlyinterfacedtoamicrocontrolunit(MCU).Idealapplicationsincludeautomotivef

MotorolaMotorola, Inc

摩托罗拉

MLD2N06CL

SMARTDISCRETESTMMOSFET2Amp,62Volts,LogicLevelN?묬hannelDPAK

TheMLD2N06CLisdesignedforapplicationsthatrequirearuggedpowerswitchingdevicewithshortcircuitprotectionthatcanbedirectlyinterfacedtoamicrocontrolunit(MCU).Idealapplicationsincludeautomotivefuelinjectordriver,incandescentlampdriverorotherapplicationswhereahig

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MLD2N06CLG

SMARTDISCRETESTMMOSFET2Amp,62Volts,LogicLevelN?묬hannelDPAK

TheMLD2N06CLisdesignedforapplicationsthatrequirearuggedpowerswitchingdevicewithshortcircuitprotectionthatcanbedirectlyinterfacedtoamicrocontrolunit(MCU).Idealapplicationsincludeautomotivefuelinjectordriver,incandescentlampdriverorotherapplicationswhereahig

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MLP2N06CL

SMARTDISCRETESTMMOSFET2Amps,62Volts,LogicLevelN?묬hannelTO??20

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MLP2N06CL

VOLTAGECLAMPEDCURRENTLIMITINGMOSFET

MotorolaMotorola, Inc

摩托罗拉

MLP2N06CLG

SMARTDISCRETESTMMOSFET2Amps,62Volts,LogicLevelN?묬hannelTO??20

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMDF2N06V

DUALTMOSMOSFET3.3AMPERES60VOLTS

TMOSVSO-8forSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Justasw

MotorolaMotorola, Inc

摩托罗拉

MMDF2N06VL

DUALTMOSMOSFET2.5AMPERES60VOLTS

TMOSV™SO-8forSurfaceMountN-ChannelEnhancement-modeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.Just

MotorolaMotorola, Inc

摩托罗拉

MTDF2N06HD

N?묬hannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

RFL2N06

2A,50Vand60V,0.95Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFL2N06L

2A,60V,0.950Ohm,LogicLevel,N-ChannelPowerMOSFET

TheRFL2N06LN-channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.T

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFW2N06RLE

2A,60V,0.160Ohm,LogicLevel,N-ChannelPowerMOSFET

TheRFW2N06RLEN-Channel,logiclevel,ESDprotected,powerMOSFETismanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.TheRFW2N06RLEwasdesigned

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

STN2N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.21Ω ■AVALANCHERUGGEDTECHNOLOGY ■SOT-223CANBEWAVEORREFLOWSOLDERED ■AVAILABLEINTAPEANDREELONREQUEST ■150°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HARDDISKDRIVER

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

供应商型号品牌批号封装库存备注价格
INFINEON
23+
8000
只做原装现货
询价
INFINEO
2020+
TO-252
15000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
INFINEON/英飞凌
21+
TO252-3
5000
原装现货/假一赔十/支持第三方检验
询价
INFINEON/英飞凌
21+ROHS
SOT-252
688888
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
INFINEON-英飞凌
24+25+/26+27+
TO-252-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
Inventus
1931+
N/A
493
加我qq或微信,了解更多详细信息,体验一站式购物
询价
Inventus
22+
NA
493
加我QQ或微信咨询更多详细信息,
询价
VB
23+
SMD
8000
原装正品
询价
INFINEON
08+(pbfree)
PG-TO252-3D-PAK(TO
8866
询价
MICROCHI
2020+
TO-252
350000
100%进口原装正品公司现货库存
询价
更多IPD2N06L供应商 更新时间2024-6-8 15:00:00