DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS

TMOS V™ SO-8 for Surface Mount N-Channel Enhancement-mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just

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Motorola

摩托罗拉

DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS RDS(on) = 0.130 OHM

TMOS V™ SO-8 for Surface Mount N-Channel Enhancement-mode Silicon GateTMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with

恩XP

N?묬hannel Power MOSFET

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ONSEMI

安森美半导体

2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive

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Intersil

2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET

The RFL2N06L N-channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. T

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Intersil