Schottky Barrier Diode

Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance – 1.0 pF @ 20 V • Low Reverse Leakage – 200 nA (max)

文件：39.99 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Schottky Barrier Diode

Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance — 1.0 pF @ 20 V • Low Reverse Leakage — 200 nA (max)

文件：105 Kbytes 页数：3 Pages

LRC

乐山无线电

Schottky Barrier Diode

Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance — 1.0 pF @ 20 V • Low Reverse Leakage — 200 nA (max)

文件：106.58 Kbytes 页数：3 Pages

ETL

亚历电子

Schottky Barrier Diode

LRC

乐山无线电

Schottky Barrier Diode

文件：90.66 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

Package：SC-76，SOD-323；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 70V SOD323

ONSEMI

安森美半导体