MMDF2N06VL数据手册恩XP中文资料规格书

描述 Description

TMOS V™ SO-8 for Surface Mount N-Channel Enhancement-mode Silicon GateTMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.New Features of TMOS V
• On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than E–FET PredecessorsFeatures Common to TMOS V and TMOS E–FETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS E–FET
• Miniature SO–8 Surface Mount Package – Saves Board Space
• Mounting Information for SO–8 Package Provided