2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET

The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFW2N06RLE was designed

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Intersil

2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET

Renesas

瑞萨

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.21 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ SOT-223 CAN BE WAVE OR REFLOW SOLDERED ■ AVAILABLE IN TAPE AND REEL ON REQUEST ■ 150 °C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HARD DISK DRIVER

文件：86.47 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

VOLTAGE CLAMPED CURRENT LIMITING MOSFET

VOLTAGE CLAMPED CURRENT LIMITING MOSFET 62 VOLTS (CLAMPED) RDS(on) = 0.4 OHMS The MLD2N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive f

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Motorola

摩托罗拉

SMARTDISCRETES TM MOSFET 2 Amp, 62 Volts, Logic Level N?묬hannel DPAK

The MLD2N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a hig

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ONSEMI

安森美半导体

SMARTDISCRETES TM MOSFET 2 Amp, 62 Volts, Logic Level N?묬hannel DPAK

The MLD2N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a hig

文件：79.84 Kbytes 页数：7 Pages

ONSEMI

安森美半导体