RFW2N06RLE中文资料INTERSIL数据手册PDF规格书

The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. The RFW2N06RLE was designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor and relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.

Formerly developmental type TA9861.

特性 Features

• 2A, 60V

• rDS(on) = 0.160Ω

• UIS Rating Curve (Single Pulse)

• Design Optimized For 5 Volt Gate Drive

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Electrostatic Discharge Protected

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”