OptiMOS Buck converter series

Feature ● N-Channel ● Logic Level ● Low On-Resistance RDS(on) ● Excellent Gate Charge x RDS(on) product (FOM) ● Superior thermal resistance ● 175°C operating temperature ● Avalanche rated ● dv/dt rated ● Ideal for fast switching buck converter

文件：424.48 Kbytes 页数：8 Pages

Infineon

英飞凌

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：624.84 Kbytes 页数：5 Pages

Bychip

百域芯

丝印：16CN10N；Package：PG-TO252-3；OptiMOS2 Power-Transistor

Features N-channel, normal level • Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Rps(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous

文件：912.29 Kbytes 页数：12 Pages

Infineon

英飞凌

OptiMOS2 Power-Transistor

Features N-channel, normal level • Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Rps(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous

文件：912.29 Kbytes 页数：12 Pages

Infineon

英飞凌

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch

文件：256.459 Kbytes 页数：9 Pages

Infineon

英飞凌

丝印：18DP10LM；Package：PG-TO252-3；OptiMOS Power-Transistor,-100V

Features *P-channel *Very low on-resistance Rds(on) @ Vgs=4.5 V *100 avalanche tested *Logic level *Enhancement mode *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC61249-2-21

文件：1.82601 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：19DP10NM；Package：PG-TO252-3；OptiMOS Power-Transistor,-100V

Features *P-channel *100 avalanche tested *Normal level *Enhancement mode *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC61249-2-21

文件：1.79585 Mbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS-T2 Power-Transistor

文件：160.1 Kbytes 页数：9 Pages

Infineon

英飞凌

OptiMOS-T2 Power-Transistor

文件：168.75 Kbytes 页数：9 Pages

Infineon

英飞凌

.100 SHROUDED CONTACT BODY

文件：269.62 Kbytes 页数：2 Pages

Samtec

美国申泰