IPD18DP10LM

丝印：18DP10LM；Package：PG-TO252-3；OptiMOS Power-Transistor,-100V

Features *P-channel *Verylowon-resistanceRds(on)@Vgs=4.5V *100avalanchetested *Logiclevel *Enhancementmode *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC61249-2-21

IPD18DP10LM

P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications; \n优势:\n• Industry standard package\n• Ideal for high and low switching frequency\n• Avalanche ruggedness\n• Easy interface to MCU\n• Improved efficiency at low loads due to low Qf\n• Reduced design complexity\n• Energy efficiency\n;