IPD1

CAT-EX-179-01 - Extraction Tool

DESCRIPTION Eachtoolhandleismarkedwiththetoolingnumber.Makesureitmatchesthetoolingnumberspecifiedinthisdocument. TheCC79MiniMate®contacthasaretaininglancethatcanbereleasedthroughanaccesswindowlocatedontheoutsideofthehousingasshowninFigure2.TheExt

IPD100N04S4-02

isc N-Channel MOSFET Transistor

·FEATURES ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on):4mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·UltraLowOn-resistance ·Fa

IPD100N04S4L-02

丝印：4N04L02；Package：PG-TO252-3-313；OptiMOS®-T2 Power-Transistor

Features •OptiMOSTM-powerMOSFETforautomotiveapplications •N-channel-Enhancementmode-LogicLevel •AECQ101qualified •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •GreenProduct(RoHScompliant) •100Avalanchetested

IPD105N03LG

OptiMOS3 Power-Transistor

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IPD10N03LA

丝印：10N03LA；Package：TO-252-3-11；OptiMOS짰2 Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant

IPD10N03LA

丝印：10N03LA；Package：TO-252-3-11；OptiMOS2 Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant

IPD10N03LAG

OptiMOS짰2 Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant

IPD11DP10NM

丝印：11DP10NM；Package：PG-TO252-3；OptiMOS Power-Transistor,-100V

Features *P-channel *100avalanchetested *normallevel *Enhancementmode *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC61249-2-21

IPD122N10N3G

OptiMOSTM3 Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

IPD122N10N3G

丝印：122N10N；Package：PG-TO252-3；OptiMOS™3 Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchron