CAT-EX-179-01 - Extraction Tool

DESCRIPTION Each tool handle is marked with the tooling number. Make sure it matches the tooling number specified in this document. The CC79 Mini Mate ® contact has a retaining lance that can be released through an access window located on the outside of the housing as shown in Figure 2. The Ext

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SAMTEC

美国申泰

isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) : 4mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra Low On-resistance ·Fa

文件：334.95 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：4N04L02；Package：PG-TO252-3-313；OptiMOS®-T2 Power-Transistor

Features • OptiMOSTM - power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100 Avalanche tested

文件：237.34 Kbytes 页数：9 Pages

INFINEON

英飞凌

OptiMOS3 Power-Transistor

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：1.236 Mbytes 页数：12 Pages

INFINEON

英飞凌

丝印：10N03LA；Package：TO-252-3-11；OptiMOS2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件：412.96 Kbytes 页数：11 Pages

INFINEON

英飞凌

丝印：10N03LA；Package：TO-252-3-11；OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件：403.13 Kbytes 页数：12 Pages

INFINEON

英飞凌

OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件：403.13 Kbytes 页数：12 Pages

INFINEON

英飞凌

丝印：11DP10NM；Package：PG-TO252-3；OptiMOS Power-Transistor,-100V

Features *P-channel *100 avalanche tested *normal level *Enhancement mode *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC61249-2-21

文件：1.80085 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：122N10N；Package：PG-TO252-3；OptiMOS™3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchron

文件：510.59 Kbytes 页数：9 Pages

INFINEON

英飞凌

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：254.29 Kbytes 页数：9 Pages

INFINEON

英飞凌