CAT-EX-179-01 - Extraction Tool

DESCRIPTION Each tool handle is marked with the tooling number. Make sure it matches the tooling number specified in this document. The CC79 Mini Mate ® contact has a retaining lance that can be released through an access window located on the outside of the housing as shown in Figure 2. The Ext

文件：299.32 Kbytes 页数：2 Pages

Samtec

美国申泰

isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) : 4mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra Low On-resistance ·Fa

文件：334.95 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：4N04L02；Package：PG-TO252-3-313；OptiMOS®-T2 Power-Transistor

Features • OptiMOSTM - power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100 Avalanche tested

文件：237.34 Kbytes 页数：9 Pages

Infineon

英飞凌

OptiMOS3 Power-Transistor

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：1.236 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：10N03LA；Package：TO-252-3-11；OptiMOS2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件：412.96 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：10N03LA；Package：TO-252-3-11；OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件：403.13 Kbytes 页数：12 Pages

Infineon

英飞凌

OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件：403.13 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：11DP10NM；Package：PG-TO252-3；OptiMOS Power-Transistor,-100V

Features *P-channel *100 avalanche tested *normal level *Enhancement mode *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC61249-2-21

文件：1.80085 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：122N10N；Package：PG-TO252-3；OptiMOS™3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchron

文件：510.59 Kbytes 页数：9 Pages

Infineon

英飞凌

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：254.29 Kbytes 页数：9 Pages

Infineon

英飞凌