IPD122N10N3G资料使用说明书供应代理英飞凌-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IPD122N10N3G	文件：254.29 Kbytes Page：9 Pages	OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr 文件：254.29 Kbytes 页数：9 Pages	INFINEON 英飞凌	INFINEON
IPD122N10N3G	文件：510.59 Kbytes Page：9 Pages	丝印：122N10N；Package：PG-TO252-3；OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchron 文件：510.59 Kbytes 页数：9 Pages	INFINEON 英飞凌	INFINEON
IPD122N10N3G	文件：508.9 Kbytes Page：9 Pages	N-channel, normal level 文件：508.9 Kbytes 页数：9 Pages	INFINEON 英飞凌	INFINEON
IPD122N10N3G_14	文件：508.9 Kbytes Page：9 Pages	N-channel, normal level 文件：508.9 Kbytes 页数：9 Pages	INFINEON 英飞凌	INFINEON

更多IPD122N10N3G供应商更新时间2026-10-15 14:01:00