型号：IPB16CN10NG；Package：PG-TO263-3；OptiMOS2 Power-Transistor

Features N-channel, normal level • Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Rps(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous

文件：912.29 Kbytes 页数：12 Pages

Infineon

英飞凌

型号：IPD16CN10NG；Package：PG-TO252-3；OptiMOS2 Power-Transistor

Features N-channel, normal level • Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Rps(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous

文件：912.29 Kbytes 页数：12 Pages

Infineon

英飞凌

型号：IPI16CN10NG；Package：PG-TO262-3；OptiMOS2 Power-Transistor

Features N-channel, normal level • Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Rps(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous

文件：912.29 Kbytes 页数：12 Pages

Infineon

英飞凌

型号：IPP16CN10NG；Package：PG-TO220-3；OptiMOS2 Power-Transistor

Features N-channel, normal level • Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Rps(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous

文件：912.29 Kbytes 页数：12 Pages

Infineon

英飞凌

型号：16CN10N；OptiMOS2 Power-Transistor

Features N-channel, normal level • Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Rps(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous

文件：912.29 Kbytes 页数：12 Pages

Infineon

英飞凌