INA211CIDCKR

Marking：16D；Package：SC70；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1Features •UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V •OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) •Accuracy: –

SMAF16CA

Marking：16D；Package：SMAF；Surface mount transient voltage suppressor power 400 watts

FEATURES Forsurfacemountedapplicationsinorderto optimizeboardspace. Lowprofilepackage Glasspassivatedjunction Lowinductance PlasticpackagehasUnderwritersLaboratory Flammability

SMAF16CA

Marking：16D；Surface mount transient voltage suppressor power 200 watts

SMAF16CA

Marking：16D；Package：SMAF；Surface mount transient voltage suppressor power 200 watts

ISC16DP15LM

Marking：16DP15LM；Package：PG-TDSON-8；OptiMOSTM Power-Transistor, -150 V

Features •P-Channel •Verylowon-resistanceRDS(on)@VGS=4.5V •100avalanchetested •LogicLevel •Enhancementmode •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

ISP16DP10LM

Marking：16DP10LM；Package：PG-SOT223-4；OptiMOS Power-Transistor,-100V

Features *P-channel *Verylowon-resistanceRds(on)@Vgs=4.5V *100avalanchetested *Logiclevel *Enhancementmode *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC61249-2-21

ISP16DP10LMA

Marking：16DP10LA；Package：PG-SOT223-4；MOSFET OptiMOSTM Small Signal Transistor, -100 V

Features •P-channel •Verylowon-resistanceRDS(on)@VGS=4.5V •Logiclevel •Enhancementmode •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

NTMFD016N06CT1G

Marking：16DN6C；Package：SO8FLDual；MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 16.3 m, 32 A