丝印：16D；Package：SC70；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features • Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: –

文件：1.58588 Mbytes 页数：45 Pages

TI

德州仪器

丝印：16D；Package：SMAF；Surface mount transient voltage suppressor power 400 watts

FEATURES For surface mounted applications in order to optimize board space. Low profile package Glass passivated junction Low inductance Plastic package has Underwriters Laboratory Flammability

文件：1.10473 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：16D；Surface mount transient voltage suppressor power 200 watts

文件：1.51236 Mbytes 页数：5 Pages

JUXING

广东钜兴电子

丝印：16D；Package：SMAF；Surface mount transient voltage suppressor power 200 watts

文件：1.51387 Mbytes 页数：5 Pages

JUXING

广东钜兴电子

丝印：16DP15LM；Package：PG-TDSON-8；OptiMOSTM Power-Transistor, -150 V

Features • P-Channel • Very low on-resistance RDS(on) @ VGS=4.5 V • 100 avalanche tested • Logic Level • Enhancement mode • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.24783 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：16DP10LM；Package：PG-SOT223-4；OptiMOS Power-Transistor,-100V

Features *P-channel *Very low on-resistance Rds(on) @ Vgs=4.5 V *100 avalanche tested *Logic level *Enhancement mode *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC61249-2-21

文件：1.77152 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：16DP10LA；Package：PG-SOT223-4；MOSFET OptiMOSTM Small Signal Transistor, -100 V

Features • P-channel • Very low on-resistance RDS(on) @ VGS=4.5 V • Logic level • Enhancement mode • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.30902 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：16DN6C；Package：SO8FLDual；MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 16.3 m, 32 A

文件：225.64 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

HIGH EFFICIENCY DIODE STACK (SWITCHING TYPE POWER SUPPLY APPICATION)

SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM=200V Average Output Rectified Current : IO=16A Ultra Fast Reverse−Recovery Time : trr=35ns (Max) Low Forward Voltage : VFM=0.98V (Max) Low Switch

文件：159.72 Kbytes 页数：2 Pages

TOSHIBA

东芝

TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE

SWITCHING TYPE POWER LUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION ● Repetitive Peak Reverse Voltage : VRRM=200, 300V ● Average Output Rectified Current : IO=16A ● Ultra Fast Reverse-Recovery Time : trr=35ns (Max.) ● Low Switching Losses and Output Noise.

文件：177.45 Kbytes 页数：4 Pages

TOSHIBA

东芝