16N

型号：MBC13916NT1；Package：SOT-343R；General Purpose SiGe:C RF Cascode Low Noise Amplifier

ETC

16N06C

型号：NVMFS016N06CT1G；Package：SO8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWS016N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Hal

16N06W

型号：NVMFWS016N06CT1G；Package：SO8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWS016N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Hal

16NC

型号：NVTFS016N06CTAG；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 16.3 m, 32 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS016N06C−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fr

16NW

型号：NVTFWS016N06CTAG；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 16.3 m, 32 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS016N06C−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fr

16N05L

型号：RFD16N05；Package：TO-252；60V N-Channel MOSFET

Features VDS(V)=60V RDS(ON)

16N05L

型号：RFD16N05LSM9A；Package：TO-252；60V N-Channel MOSFET

Features VDS(V)=60V RDS(ON)

16N10

型号：ST16N10-TP；Package：TO-252-3L；N-Channel 100-V (D-S) MOSFET

Features ®Ros10m0@VGS=10vV ®SuperhighdensitycelldesignforextremelylowRos)| ®Exceptionalon-resistanceandmaximumDCcurrent

16N90K5

型号：STB16N90K5；Package：D2PAK；N-channel 900 V, 280 mΩ typ., 15 A MDmesh K5 Power MOSFET in a D²PAK package

Features •Industry’slowestRDS(on)xarea •Industry’sbestFoM(figureofmerit) •Ultra-lowgatecharge •100avalanchetested •Zener-protected Applications •Switchingapplications Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmeshK5 technology

16N65M2

型号：STP16N65M2；Package：TO-220；N-channel 650 V, 0.32 ??typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages

Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh™M2technology. Thankstotheirstriplayoutandimprovedvertical structure,thedevicesexhibitlowon-resistance andoptimizedswitchingcharacteristics,rendering themsuitableforthemostdemandinghigh effic