丝印：16N；Package：SOT-343R；General Purpose SiGe:C RF Cascode Low Noise Amplifier

文件：492.11 Kbytes 页数：16 Pages

恩XP

丝印：16N06C；Package：SO8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：189.19 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：16N06W；Package：SO8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：189.19 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：16NC；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 16.3 m, 32 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fr

文件：280.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：16NW；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 16.3 m, 32 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fr

文件：280.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：16N05L；Package：TO-252；60V N-Channel MOSFET

Features VDS (V) =60V RDS(ON)

文件：491.7 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：16N05L；Package：TO-252；60V N-Channel MOSFET

Features VDS (V) =60V RDS(ON)

文件：491.7 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：16N10；Package：TO-252-3L；N-Channel 100-V (D-S) MOSFET

Features ® Ros 10m0@VGS=10vV ® Super high density cell design for extremely low Ros) | ® Exceptional on-resistance and maximum DC current

文件：2.67918 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：16N90K5；Package：D2PAK；N-channel 900 V, 280 mΩ typ., 15 A MDmesh K5 Power MOSFET in a D²PAK package

Features • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology

文件：682.52 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：16N65M2；Package：TO-220；N-channel 650 V, 0.32 ??typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high effic

文件：824.02 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体