丝印：16N；Package：SC70(DCK)；INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side, Voltage-Output, Current-Shunt Monitor

1 Features • Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±150 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error (Maximum Over Temperature): • ±1% (C Version) • ±1.5% (A and B Versions) – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain D

文件：1.4577 Mbytes 页数：42 Pages

TI

德州仪器

丝印：16N；Package：SC70(DCK)；INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side, Voltage-Output, Current-Shunt Monitor

1 Features • Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±150 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error (Maximum Over Temperature): • ±1% (C Version) • ±1.5% (A and B Versions) – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain D

文件：1.4577 Mbytes 页数：42 Pages

TI

德州仪器

丝印：16N；Package：SC70(DCK)；INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side, Voltage-Output, Current-Shunt Monitor

1 Features • Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±150 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error (Maximum Over Temperature): • ±1% (C Version) • ±1.5% (A and B Versions) – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain D

文件：1.4577 Mbytes 页数：42 Pages

TI

德州仪器

丝印：16N；Package：SC70(DCK)；INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side, Voltage-Output, Current-Shunt Monitor

1 Features • Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±150 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error (Maximum Over Temperature): • ±1% (C Version) • ±1.5% (A and B Versions) – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain D

文件：1.4577 Mbytes 页数：42 Pages

TI

德州仪器

丝印：16N；Package：SOT-343R；General Purpose SiGe:C RF Cascode Low Noise Amplifier

文件：492.11 Kbytes 页数：16 Pages

恩XP

丝印：16N06C；Package：SO8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：189.19 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：16N06W；Package：SO8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：189.19 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：16NC；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 16.3 m, 32 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fr

文件：280.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：16NW；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 16.3 m, 32 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fr

文件：280.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：16N05L；Package：TO-252；60V N-Channel MOSFET

Features VDS (V) =60V RDS(ON)

文件：491.7 Kbytes 页数：6 Pages

UMW

友台半导体