丝印：16N06C；Package：SO8FL；MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：189.19 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：189.19 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 16.3 m, 32 A

文件：225.64 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

ON
QFN8

ON

上传：深圳市鼎欣微电子有限公司

ON
8-PowerTDFN

ON

上传：深圳市广弘电子有限公司