丝印：16M；Package：SC70(DCK)；INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side, Voltage-Output, Current-Shunt Monitor

1 Features • Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±150 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error (Maximum Over Temperature): • ±1% (C Version) • ±1.5% (A and B Versions) – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain D

文件：1.4577 Mbytes 页数：42 Pages

TI

德州仪器

丝印：16M；Package：SC70(DCK)；INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side, Voltage-Output, Current-Shunt Monitor

1 Features • Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±150 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error (Maximum Over Temperature): • ±1% (C Version) • ±1.5% (A and B Versions) – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain D

文件：1.4577 Mbytes 页数：42 Pages

TI

德州仪器

丝印：16M；Package：SC70(DCK)；INA199 26-V, Bidirectional, Zero-Drift, Low- or High-Side, Voltage-Output, Current-Shunt Monitor

1 Features • Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±150 μV (Maximum) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: – Gain Error (Maximum Over Temperature): • ±1% (C Version) • ±1.5% (A and B Versions) – 0.5-μV/°C Offset Drift (Maximum) – 10-ppm/°C Gain D

文件：1.4577 Mbytes 页数：42 Pages

TI

德州仪器

丝印：16M；Package：WDFNW6；ESD Protection with Automotive Short-to-Battery Blocking

文件：246.9 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：16M6；Package：VSSOP(DGK)；TLVx316-Q1 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifiers

1 Features 1. Qualified for Automotive Applications . AEC-Q100 With the Following Results: . Device Temperature Grade 1: .40°C to +125°C Ambient Operating Temperature Range . Device HBM ESD Classification Level 3A . Device CDM ESD Classification Level C5 . Unity-Gain Bandwidth: 10 MHz . L

文件：1.24858 Mbytes 页数：35 Pages

TI

德州仪器

丝印：16M6；Package：VSSOP(DGK)；TLVx316-Q1 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifiers

1 Features 1. Qualified for Automotive Applications . AEC-Q100 With the Following Results: . Device Temperature Grade 1: .40°C to +125°C Ambient Operating Temperature Range . Device HBM ESD Classification Level 3A . Device CDM ESD Classification Level C5 . Unity-Gain Bandwidth: 10 MHz . L

文件：1.24858 Mbytes 页数：35 Pages

TI

德州仪器

丝印：16M6；Package：VSSOP(DGK)；TLVx316-Q1 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifiers

1 Features 1. Qualified for Automotive Applications . AEC-Q100 With the Following Results: . Device Temperature Grade 1: .40°C to +125°C Ambient Operating Temperature Range . Device HBM ESD Classification Level 3A . Device CDM ESD Classification Level C5 . Unity-Gain Bandwidth: 10 MHz . L

文件：1.24858 Mbytes 页数：35 Pages

TI

德州仪器

丝印：16M6；Package：VSSOP(DGK)；TLVx316-Q1 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifiers

1 Features 1. Qualified for Automotive Applications . AEC-Q100 With the Following Results: . Device Temperature Grade 1: .40°C to +125°C Ambient Operating Temperature Range . Device HBM ESD Classification Level 3A . Device CDM ESD Classification Level C5 . Unity-Gain Bandwidth: 10 MHz . L

文件：1.24858 Mbytes 页数：35 Pages

TI

德州仪器

60V 300mA MONOLITHIC DIODE ARRAY

FEATURES: ● 16 DIODE CORE DRIVER ● trr

文件：18.7 Kbytes 页数：1 Pages

MICROSEMI

美高森美

60V 300mA MONOLITHIC DIODE ARRAY

FEATURES: ● 16 DIODE CORE DRIVER ● trr

文件：18.7 Kbytes 页数：1 Pages

MICROSEMI

美高森美