丝印：16CN10N；Package：PG-TO262-3；OptiMOS2 Power-Transistor

Features N-channel, normal level • Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Rps(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous

文件：912.29 Kbytes 页数：12 Pages

Infineon

英飞凌

OptiMOS짰2 Power-Transistor Excellent gate charge x RDS(on) product (FOM)

文件：624.72 Kbytes 页数：12 Pages

Infineon

英飞凌

OptiMOS2 Power-Transistor

文件：325.77 Kbytes 页数：9 Pages

Infineon

英飞凌

OptiMOS짰2 Power-Transistor Excellent gate charge x RDS(on) product (FOM)

文件：624.72 Kbytes 页数：12 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

文件：337.87 Kbytes 页数：2 Pages

ISC

无锡固电