CoolMOSTM Power Transistor

Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies for

文件：311.78 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：6R099P；Package：PG-TO262；High peak current capability

Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant

文件：551.62 Kbytes 页数：10 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.099Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：331.31 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOS Power Transistor

文件：290.76 Kbytes 页数：10 Pages

Infineon

英飞凌

High peak current capability

Features • Worldwide best R ds,on in TO220 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant

文件：551.62 Kbytes 页数：10 Pages

Infineon

英飞凌

CoolMOS Power Transistor

Features • Worldwide best Rds,on in TO262 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications

文件：434.11 Kbytes 页数：11 Pages

Infineon

英飞凌

CoolMOS Power Transistor

文件：290.76 Kbytes 页数：10 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ CP 是英飞凌第五个 CoolMOS™ 系列产品，专门设计用于 ATX、笔记本适配器 PDP 和 LCD 电视的软硬开关拓扑、CCM PFC 以及 PWM。\n   • 极低的 R on x Q g 品质因数\n• 极低的栅极电荷\n• 极端 dv/dt 额定值\n• 极低的 R DS(on)，超低的栅极电压，极快速开关\n• V th 为 3 V，g fs 极高，内部 R g 非常低\n• 高电流能力\n• 显著减少传导和开关损耗\n• 高功率密度和效率，实现更高功率转换系统\n• 出色性价/性能比\n\n优势:;

Infineon

英飞凌

20V-650V汽车级MOSFET

• Worldwide best RDS(on) in TO-220 package\n• Ultra low gate charge\n• Extreme dv/dt rated\n• High peak current capability\n• Automotive AEC Q101 qualified\n• Green package (RoHS compliant)\n\n优势:\n;

Infineon

英飞凌