IPI50R350CP

CoolMOSTM Power Transistor

Features •LowestfigureofmeritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisspeciallydesignedfor: •HardandsoftswitchingSMPSforse

IPI50R350CP

isc N-Channel MOSFET Transistor

•DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.35Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IPI50R350CP

500V-900V CoolMOS™ N-Channel Power MOSFET; • 极低的 R on x Q g 品质因数\n• 极低的栅极电荷\n• 极端 dv/dt 额定值\n• 极低的 R DS(on)，超低的栅极电压，极快速开关\n• V th 为 3 V，g fs 极高，内部 R g 非常低\n• 高电流能力\n• 显著减少传导和开关损耗\n• 高功率密度和效率，实现更高功率转换系统\n• 出色性价/性能比\n\n优势:\n;

CoolMOS™ CP 是英飞凌第五个 CoolMOS™ 系列产品，专门设计用于 ATX、笔记本适配器 PDP 和 LCD 电视的软硬开关拓扑、CCM PFC 以及 PWM。\n  \n

IPP50R350CP

N-ChannelMOSFETTransistor

•DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.35Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IPP50R350CP

CoolMOSTMPowerTransistor

Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant;Halogenfreeformoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCPisdesignedfor: •Ha

IPP50R350CP

CoolMOSTMPowerTransistor