CoolMOSTM Power Transistor

Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications CoolMOS CP is specially designed for: • Hard and softswitching SMPS for se

文件：244.16 Kbytes 页数：10 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

• DESCRITION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.35Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：331.49 Kbytes 页数：2 Pages

ISC

无锡固电

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

CoolMOS™ CP 是英飞凌第五个 CoolMOS™ 系列产品，专门设计用于 ATX、笔记本适配器 PDP 和 LCD 电视的软硬开关拓扑、CCM PFC 以及 PWM。\n   • 极低的 R on x Q g 品质因数\n• 极低的栅极电荷\n• 极端 dv/dt 额定值\n• 极低的 R DS(on)，超低的栅极电压，极快速开关\n• V th 为 3 V，g fs 极高，内部 R g 非常低\n• 高电流能力\n• 显著减少传导和开关损耗\n• 高功率密度和效率，实现更高功率转换系统\n• 出色性价/性能比\n\n优势:;

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.35Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：339.04 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOSTM Power Transistor

Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant; Halogen free for mold compound • Qualified for industrial grade applications according to JEDEC1) CoolMOS CP is designed for: • Ha

文件：280.99 Kbytes 页数：10 Pages

Infineon

英飞凌

CoolMOSTM Power Transistor

文件：781.43 Kbytes 页数：10 Pages

Infineon

英飞凌