OptiMOS짰2 Power-Transistor Excellent gate charge x RDS(on) product (FOM)

文件：624.72 Kbytes 页数：12 Pages

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英飞凌

isc N-Channel MOSFET Transistor

文件：337.87 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：16CN10N；Package：PG-TO220-3；OptiMOS2 Power-Transistor

Features N-channel, normal level • Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Rps(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous

文件：912.29 Kbytes 页数：12 Pages

INFINEON

英飞凌

OptiMOS2 Power-Transistor

Features N-channel, normal level • Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Rps(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous

文件：912.29 Kbytes 页数：12 Pages

INFINEON

英飞凌

OptiMOS2 Power-Transistor

Features N-channel, normal level • Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Rps(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous

文件：912.29 Kbytes 页数：12 Pages

INFINEON

英飞凌

OptiMOS짰2 Power-Transistor Excellent gate charge x RDS(on) product (FOM)

文件：624.72 Kbytes 页数：12 Pages

INFINEON

英飞凌

20V-300V N-Channel Power MOSFET

英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。 • 优异的开关性能\n• 世界较低的 (R Ds(on))\n• 极低的 Qg 和 Qgd\n• 出色的栅极电荷 x R DS（on）产品（FOM）\n• 符合 RoHS 标准 - 无卤素\n• MSL1 评级 2\n\n优势:\n• 环保\n• 提高效率\n• 极高的功率密度\n• 减少并联\n• 极低的板空间消耗\n• 产品易于设计;

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英飞凌

MOSFET N-CH 100V TO-220

Infineon

英飞凌