丝印：19DP10NM；Package：PG-TO252-3；OptiMOS Power-Transistor,-100V

Features *P-channel *100 avalanche tested *Normal level *Enhancement mode *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC61249-2-21

文件：1.79585 Mbytes 页数：11 Pages

Infineon

英飞凌

普通级别的 P 沟道 MOSFET，降低中低功率应用的设计复杂性

\n优势:\n• Industry standard package\n• Ideal for high and low switching frequency\n• Avalanche ruggedness\n• Easy interface to MCU\n• Improved efficiency at low loads due to low Qf\n• Reduced design complexity\n• Energy efficiency;

Infineon

英飞凌

OptiMOS Power-Transistor,-100V

Features *p-channel *100 avalanche tested *Nomal level *Enhancement mode *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC61249-2-21

文件：1.7856 Mbytes 页数：11 Pages

Infineon

英飞凌

TO-252

Infineon

英飞凌

上传：深圳市龙瀚电子有限公司

TO-252

INFINEON/英飞凌

上传：深圳安世裕电子科技有限公司