丝印：GT019N04；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT019N04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：959.26 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT019N04；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT019N04D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.1775 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT019N04；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT019N04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：959.26 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT019N04；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT019N04D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.1775 Mbytes 页数：6 Pages

GOFORD

谷峰半导体