丝印：GT023N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：950.3 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT023N10；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：924.7 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT023N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：886.98 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT023N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：944 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT023N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：992.28 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT023N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.11145 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT023N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：950.3 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT023N10；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：924.7 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT023N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：886.98 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT023N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：944 Kbytes 页数：6 Pages

GOFORD

谷峰半导体