丝印：GT010N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT010N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：995.9 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT010N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT010N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.14237 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT010N10；Package：TOLT；N-Channel Enhancement Mode Power MOSFET

Description The GT010N10TT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：821.3 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT010N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT010N10TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：995.9 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT010N10；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT010N10TLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.14237 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT010N10；Package：TOLT；N-Channel Enhancement Mode Power MOSFET

Description The GT010N10TT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：821.3 Kbytes 页数：6 Pages

GOFORD

谷峰半导体