丝印：GT013N04；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT013N04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：680.85 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT013N04；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT013N04D5C uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：881.37 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT013N04H；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT013N04D5CH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：874.72 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT013N04H；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT013N04D5H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：827.4 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT013N04I；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT013N04TI uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：850.38 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT013N04；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT013N04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：680.85 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT013N04；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT013N04D5C uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：881.37 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT013N04H；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT013N04D5CH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：874.72 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT013N04H；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT013N04D5H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：827.4 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT013N04I；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT013N04TI uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：850.38 Kbytes 页数：6 Pages

GOFORD

谷峰半导体