丝印：GC11N60；Package：TO-220；Power Factor Correction (PFC)

Description The GC11N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap

文件：4.32953 Mbytes 页数：7 Pages

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谷峰半导体

丝印：GC11N65；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：792.54 Kbytes 页数：6 Pages

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谷峰半导体

丝印：GC11N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：783.72 Kbytes 页数：6 Pages

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谷峰半导体

丝印：GC11N65；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：742.8 Kbytes 页数：6 Pages

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谷峰半导体

丝印：GC11N65；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.01237 Mbytes 页数：6 Pages

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谷峰半导体

丝印：GC11N65；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.28811 Mbytes 页数：6 Pages

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谷峰半导体

丝印：GC11N65；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.07184 Mbytes 页数：6 Pages

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谷峰半导体

丝印：GC11N70；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC11N70F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：765.67 Kbytes 页数：6 Pages

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谷峰半导体

丝印：GC11N70；Package：TO-220F；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

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谷峰半导体

丝印：GC11N70；Package：TO-251；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

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谷峰半导体